IRF4104S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

DS Breakdown Voltage-Min :

40V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

40V

Drain-source On Resistance-Max :

0.0055Ohm

Series :

HEXFET®

Avalanche Energy Rating (Eas) :

220 mJ

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 25V

Number of Terminations :

2

Power Dissipation-Max :

140W Tc

Pulsed Drain Current-Max (IDM) :

470A

Packaging :

Tube

Published :

2003

Drain Current-Max (Abs) (ID) :

75A

Transistor Element Material :

SILICON

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 75A, 10V