IRF510STRR
- Mfr.Part #
- IRF510STRR
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 5.6A D2PAK
- Stock
- 21,488
- In Stock :
- 21,488
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Min Operating Temperature :
- -55°C
- Input Capacitance :
- 180pF
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 180pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 540mOhm @ 3.4A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 8.3nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 5.6A Tc
- RoHS Status :
- Non-RoHS Compliant
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Resistance :
- 540mOhm
- Weight :
- 1.437803g
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 6.9 ns
- Supplier Device Package :
- D2PAK
- FET Type :
- N-Channel
- Length :
- 10.67mm
- Height :
- 4.83mm
- Rds On Max :
- 540 mΩ
- Rise Time :
- 16ns
- Drain to Source Voltage (Vdss) :
- 100V
- Width :
- 9.65mm
- Mounting Type :
- Surface Mount
- Max Operating Temperature :
- 175°C
- Turn-Off Delay Time :
- 15 ns
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 9.4 ns
- Continuous Drain Current (ID) :
- 5.6A
- Power Dissipation-Max :
- 3.7W Ta 43W Tc
- Datasheets
- IRF510STRR

N-Channel Tape & Reel (TR) 540mOhm @ 3.4A, 10V ±20V 180pF @ 25V 8.3nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF510STRR Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 180pF @ 25V.This device conducts a continuous drain current (ID) of 5.6A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 540mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6.9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF510STRR Features
a continuous drain current (ID) of 5.6A
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRF510STRR Applications
There are a lot of Vishay Siliconix
IRF510STRR applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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