IRF610

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Turn On Delay Time :

8.2 ns

Rise Time :

17ns

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

200V

Voltage - Rated DC :

200V

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Supplier Device Package :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

200V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

3.3A

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 2A, 10V

Length :

10.41mm

Turn-Off Delay Time :

14 ns

Height :

9.01mm

Power Dissipation-Max :

36W Tc

Drain to Source Resistance :

1.5Ohm

Input Capacitance :

140pF

Nominal Vgs :

4 V

Fall Time (Typ) :

8.9 ns

Weight :

6.000006g

Element Configuration :

Single

Lead Free :

Contains Lead

Packaging :

Tube

Current Rating :

3.3A

Number of Channels :

1

Width :

4.7mm

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Power Dissipation :

3W

Rds On Max :

1.5 Ω

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

3.3A Tc

Number of Pins :

3

REACH SVHC :

Unknown

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ