IRF7313TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

REACH SVHC :

No SVHC

Width :

4.05mm

Max Power Dissipation :

2W

Transistor Application :

SWITCHING

Height :

1.75mm

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

JESD-609 Code :

e3

Resistance :

29mOhm

FET Feature :

Standard

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Row Spacing :

6.3 mm

Number of Terminations :

8

Continuous Drain Current (ID) :

6.5A

Rds On (Max) @ Id, Vgs :

29m Ω @ 5.8A, 10V

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

1V

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Vgs(th) (Max) @ Id :

1V @ 250μA

Length :

4.9784mm

Number of Pins :

8

Published :

2002

Current Rating :

6.5A

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Rise Time :

8.9ns

Number of Elements :

2

Fall Time (Typ) :

17 ns

Recovery Time :

68 ns

Voltage - Rated DC :

30V

Radiation Hardening :

No

Lead Free :

Lead Free

Contact Plating :

Tin

Turn-Off Delay Time :

26 ns

Drain to Source Breakdown Voltage :

30V

Factory Lead Time :

12 Weeks

Base Part Number :

IRF7313PBF

Turn On Delay Time :

8.1 ns

Element Configuration :

Dual

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Nominal Vgs :

1 V

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Channels :

2

FET Type :

2 N-Channel (Dual)

Dual Supply Voltage :

30V

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)