IRF7750TRPBF
- Mfr.Part #
- IRF7750TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET 2P-CH 20V 4.7A 8TSSOP
- Stock
- 30,187
- In Stock :
- 30,187
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Element Configuration :
- Dual
- Number of Elements :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 4.7A
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 180 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 15V
- Dual Supply Voltage :
- -20V
- Fall Time (Typ) :
- 210 ns
- Turn On Delay Time :
- 15 ns
- Width :
- 4.4958mm
- RoHS Status :
- RoHS Compliant
- Rds On Max :
- 30 mΩ
- Power Dissipation :
- 1W
- Length :
- 3.0988mm
- Supplier Device Package :
- 8-TSSOP
- Continuous Drain Current (ID) :
- 4.7A
- Input Capacitance :
- 1.7nF
- Mounting Type :
- Surface Mount
- Number of Pins :
- 8
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- Base Part Number :
- IRF7750PBF
- Nominal Vgs :
- -1.2 V
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 5V
- Rise Time :
- 54ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 12V
- Radiation Hardening :
- No
- Termination :
- SMD/SMT
- Threshold Voltage :
- -1.2V
- Max Operating Temperature :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Series :
- HEXFET®
- Rds On (Max) @ Id, Vgs :
- 30mOhm @ 4.7A, 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Min Operating Temperature :
- -55°C
- Published :
- 2009
- Power - Max :
- 1W
- Height :
- 1.0414mm
- Max Power Dissipation :
- 1W
- Mount :
- Surface Mount
- FET Type :
- 2 P-Channel (Dual)
- Drain to Source Resistance :
- 55mOhm
- Drain to Source Breakdown Voltage :
- -20V
- FET Feature :
- Logic Level Gate
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Drain to Source Voltage (Vdss) :
- 20V
- Datasheets
- IRF7750TRPBF

IRF7750TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at
IRF7750TRPBF Description
International Rectifier's HEXFET Power MOSFET uses advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with the well-known rugged equipment design of International Rectifier, provides designers with extremely efficient and reliable equipment for battery and load management. Compared with the standard SO-8, the footprint of the TSSOP-8 package is reduced by 45%. This makes the TSSOP-8 an ideal device for space-constrained applications on printed circuit boards. The ultra-thin shape (< 1.1 mm) makes it easy to install in extremely thin environments, such as portable electronics and PCMCIA cards.
IRF7750TRPBF Features
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile ( < 1.1mm)
Available in Tape & Reel
Lead-Free
IRF7750TRPBF Applications
space-constrained applications on printed circuit boards
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