IRFB16N60LPBF
- Mfr.Part #
- IRFB16N60LPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 16A TO220AB
- Stock
- 15,327
- In Stock :
- 15,327
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On Max :
- 460 mΩ
- Drain to Source Voltage (Vdss) :
- 600V
- Fall Time (Typ) :
- 5.5 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Width :
- 4.7mm
- Number of Pins :
- 3
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 2720pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Rds On (Max) @ Id, Vgs :
- 460mOhm @ 9A, 10V
- Turn On Delay Time :
- 20 ns
- Vgs (Max) :
- ±30V
- Height :
- 9.01mm
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 28 ns
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 16A
- Input Capacitance :
- 2.72nF
- Packaging :
- Tube
- Supplier Device Package :
- TO-220AB
- Rise Time :
- 44ns
- Weight :
- 6.000006g
- RoHS Status :
- ROHS3 Compliant
- Length :
- 10.41mm
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Resistance :
- 460mOhm
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 600V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 310W Tc
- Published :
- 2009
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Datasheets
- IRFB16N60LPBF

N-Channel Tube 460mOhm @ 9A, 10V ±30V 2720pF @ 25V 100nC @ 10V 600V TO-220-3
IRFB16N60LPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2720pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 16A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 28 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 460mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFB16N60LPBF Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 28 ns
single MOSFETs transistor is 460mOhm
a 600V drain to source voltage (Vdss)
IRFB16N60LPBF Applications
There are a lot of Vishay Siliconix
IRFB16N60LPBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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