IRFB16N60LPBF

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Mfr.Part #
IRFB16N60LPBF
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 16A TO220AB
Stock
15,327
In Stock :
15,327

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On Max :
460 mΩ
Drain to Source Voltage (Vdss) :
600V
Fall Time (Typ) :
5.5 ns
Gate to Source Voltage (Vgs) :
30V
Width :
4.7mm
Number of Pins :
3
Number of Channels :
1
Vgs(th) (Max) @ Id :
5V @ 250μA
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
2720pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Rds On (Max) @ Id, Vgs :
460mOhm @ 9A, 10V
Turn On Delay Time :
20 ns
Vgs (Max) :
±30V
Height :
9.01mm
Element Configuration :
Single
Turn-Off Delay Time :
28 ns
Max Operating Temperature :
150°C
Min Operating Temperature :
-55°C
Mount :
Through Hole
Continuous Drain Current (ID) :
16A
Input Capacitance :
2.72nF
Packaging :
Tube
Supplier Device Package :
TO-220AB
Rise Time :
44ns
Weight :
6.000006g
RoHS Status :
ROHS3 Compliant
Length :
10.41mm
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Resistance :
460mOhm
Operating Temperature :
-55°C~150°C TJ
Drain to Source Breakdown Voltage :
600V
FET Type :
N-Channel
Power Dissipation-Max :
310W Tc
Published :
2009
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 10V
Datasheets
IRFB16N60LPBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFB16N60LPBF from Xinshop,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1, Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, IRFB16N60LPBF pinout, IRFB16N60LPBF datasheet PDF, IRFB16N60LPBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFB16N60LPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFB16N60LPBF


N-Channel Tube 460mOhm @ 9A, 10V ±30V 2720pF @ 25V 100nC @ 10V 600V TO-220-3

IRFB16N60LPBF Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2720pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 16A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 28 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 460mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFB16N60LPBF Features


a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 28 ns
single MOSFETs transistor is 460mOhm
a 600V drain to source voltage (Vdss)


IRFB16N60LPBF Applications


There are a lot of Vishay Siliconix
IRFB16N60LPBF applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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