IRFF313

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

3

Pulsed Drain Current-Max (IDM) :

4.5 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Subcategory :

FET General Purpose Power

Drain-source On Resistance-Max :

5 Ω

Vgs (Max) :

-

Polarity/Channel Type :

N-Channel

JESD-30 Code :

O-MBCY-W3

JEDEC-95 Code :

TO-205AF

Package :

Bulk

Transistor Element Material :

SILICON

Package Shape :

Round

Terminal Position :

BOTTOM

Manufacturer :

International Rectifier

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e0

Reach Compliance Code :

Unknown

Supplier Device Package :

TO-205AF (TO-39)

Surface Mount :

No

Drain to Source Voltage (Vdss) :

350 V

Operating Temperature :

-

Power Dissipation (Max) :

15W

FET Type :

N-Channel

FET Feature :

-

Terminal Finish :

Tin/Lead (Sn/Pb)

Power Dissipation-Max (Abs) :

15 W

Number of Elements :

1

Series :

-

Terminal Form :

Wire

DS Breakdown Voltage-Min :

350 V

Vgs(th) (Max) @ Id :

-

Rds On (Max) @ Id, Vgs :

-

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

1.15 A

Package / Case :

TO-205AF Metal Can

Configuration :

Single

Product Status :

Active

Drive Voltage (Max Rds On, Min Rds On) :

-

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

1.15A