IRL3102

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Package / Case :

TO-220-3

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

240A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

13m Ω @ 37A, 7V

Vgs(th) (Max) @ Id :

700mV @ 250μA

Surface Mount :

No

Additional Feature :

LOGIC LEVEL COMPATIBLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Power Dissipation-Max :

89W Tc

Avalanche Energy Rating (Eas) :

220 mJ

FET Type :

N-Channel

Case Connection :

DRAIN

Number of Terminations :

3

Series :

HEXFET®

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.013Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 7V

DS Breakdown Voltage-Min :

20V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

61A

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 4.5V

Mounting Type :

Through Hole

Published :

1997

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 15V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3