IRLBA1304

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Terminal Position :

Single

Published :

1999

Packaging :

Tube

Vgs (Max) :

±16V

JESD-30 Code :

R-PSIP-T3

Number of Terminations :

3

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

95A

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

4m Ω @ 110A, 10V

Drain to Source Voltage (Vdss) :

40V

Power Dissipation-Max :

300W Tc

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

DS Breakdown Voltage-Min :

40V

Vgs(th) (Max) @ Id :

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

7660pF @ 25V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

185A Tc

Pulsed Drain Current-Max (IDM) :

740A

Terminal Finish :

MATTE TIN OVER NICKEL

Surface Mount :

No

Avalanche Energy Rating (Eas) :

1160 mJ

Drain-source On Resistance-Max :

0.004ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-273AA

Peak Reflow Temperature (Cel) :

250

Qualification Status :

Not Qualified