IRS21271STRPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Number of Drivers :

1

Published :

1996

High Side Voltage - Max (Bootstrap) :

600V

Length :

4.9784mm

JESD-609 Code :

e3

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Max Power Dissipation :

625mW

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation :

625mW

Number of Functions :

1

Resistance :

125Ohm

Terminal Form :

Gull wing

Lead Free :

Lead Free

Rise Time :

130ns

Number of Pins :

8

Channel Type :

Single

Current - Peak Output (Source, Sink) :

290mA 600mA

Operating Temperature :

-40°C~150°C TJ

Max Supply Current :

120μA

Voltage - Supply :

9V~20V

Number of Terminations :

8

Logic Voltage - VIL, VIH :

0.8V 2.5V

Nominal Supply Current :

120μA

Turn-Off Delay Time :

150 ns

ECCN Code :

EAR99

Mount :

Surface Mount

Rise / Fall Time (Typ) :

80ns 40ns

Packaging :

Tape and Reel (TR)

Supply Voltage :

15V

Turn Off Time :

0.2 μs

Width :

3.9878mm

Mounting Type :

Surface Mount

Propagation Delay :

200 ns

Gate Type :

IGBT, N-Channel MOSFET

Turn On Delay Time :

150 ns

Output Current :

200mA

Terminal Position :

Dual

Output Peak Current Limit-Nom :

0.6A

Max Output Current :

600mA

High Side Driver :

yes

Input Type :

Non-Inverting

Turn On Time :

0.2 μs

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Driven Configuration :

High-Side

Base Part Number :

IRS21271SPBF

Height :

1.4986mm

Fall Time (Typ) :

65 ns

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Interface IC Type :

BUFFER OR INVERTER BASED MOSFET DRIVER