IS41LV16100B-60TLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Length :

20.95mm

Number of Functions :

1

Supply Voltage-Max (Vsup) :

3.6V

JESD-609 Code :

e3

Memory Format :

DRAM

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Terminal Finish :

Matte Tin (Sn) - annealed

HTS Code :

8542.32.00.02

Supply Voltage-Min (Vsup) :

3V

Memory Type :

Volatile

Pbfree Code :

yes

Memory Size :

16Mb 1M x 16

Access Time :

30ns

Voltage - Supply :

3V~3.6V

Supply Voltage :

3.3V

Pin Count :

50

I/O Type :

COMMON

Memory Interface :

Parallel

Packaging :

Tray

Memory Width :

16

Output Characteristics :

3-STATE

Operating Supply Voltage :

3.3V

Terminal Position :

Dual

Package / Case :

44-TSOP (0.400, 10.16mm Width)

Density :

16 Mb

Standby Current-Max :

0.002A

Operating Temperature :

-40°C~85°C TA

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

44

Number of Ports :

1

Data Bus Width :

16b

Mount :

Surface Mount

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Number of Pins :

44

Nominal Supply Current :

170mA

Additional Feature :

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Height Seated (Max) :

1.2mm

Terminal Pitch :

0.8mm

Self Refresh :

No

Operating Mode :

ASYNCHRONOUS

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Organization :

1MX16

Refresh Cycles :

1024

Address Bus Width :

10b