IXTA08N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 50μA

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

4

Reach Compliance Code :

not_compliant

Transistor Type :

1 N-Channel

Power Dissipation (Max) :

42W (Tc)

Fall Time (Typ) :

34 ns

Continuous Drain Current (ID) :

800mA

Series :

Polar™

Base Product Number :

IXTA08

Rise Time :

37ns

FET Type :

N-Channel

Product Status :

Active

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Maximum Operating Temperature :

+ 150 C

Drain-source On Resistance-Max :

20 Ω

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Avalanche Energy Rating (Eas) :

80 mJ

Power Dissipation :

42W

Number of Terminals :

2

Mount :

Surface Mount

Minimum Operating Temperature :

- 55 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Width :

9.65 mm

Rds On (Max) @ Id, Vgs :

20 Ω @ 500mA, 10V

Package Shape :

RECTANGULAR

Product Type :

MOSFET

Lead Free :

Lead Free

Factory Lead Time :

28 Weeks

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

1000 V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Number of Channels :

1 Channel

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

800mA Tc

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

1000V

FET Feature :

--

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 10V

Length :

10.41 mm

Pulsed Drain Current-Max (IDM) :

1.8A

Mounting Style :

SMD/SMT

Element Configuration :

Single

Configuration :

Single

Package :

Tube

Drain Current-Max (Abs) (ID) :

0.8A

Terminal Form :

Gull wing

Channel Mode :

Enhancement

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Power Dissipation-Max :

42W Tc

Packaging :

Tube

Manufacturer :

IXYS

Turn-Off Delay Time :

35 ns

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Product Category :

MOSFET

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

1kV

Supplier Device Package :

TO-263 (IXTA)

Polarity/Channel Type :

N-Channel

JEDEC-95 Code :

TO-263AB

Power Dissipation-Max (Abs) :

42 W

Published :

2009

Brand :

IXYS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Height :

4.83 mm