IXTH36N50P

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Mfr.Part #
IXTH36N50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 36A TO247
Stock
108
In Stock :
108

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
ECCN Code :
EAR99
FET Feature :
--
Minimum Operating Temperature :
- 55 C
Case Connection :
DRAIN
Nominal Vgs :
5 V
Transistor Type :
1 N-Channel
Avalanche Energy Rating (Eas) :
1500 mJ
Terminal Position :
Single
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
5V @ 250μA
Published :
2006
Vgs (Max) :
±30V
Maximum Operating Temperature :
+ 150 C
Pulsed Drain Current-Max (IDM) :
108A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Channel Mode :
Enhancement
Reach Compliance Code :
Compliant
Configuration :
Single
Drain-source On Resistance-Max :
0.17 Ω
Resistance :
170mOhm
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
Qualification Status :
Not Qualified
Power Dissipation (Max) :
540W (Tc)
Terminal Form :
THROUGH-HOLE
Polarity/Channel Type :
N-Channel
Channel Type :
N Channel
Drain to Source Voltage (Vdss) :
500V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Voltage - Rated DC :
500V
Supplier Device Package :
TO-247 (IXTH)
Package Shape :
RECTANGULAR
RoHS :
Details
Product Status :
Active
Tradename :
PolarHV
Mounting Style :
Through Hole
Mount :
Through Hole
Drain to Source Breakdown Voltage :
500V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Packaging :
Tube
Width :
5.3 mm
Product Category :
MOSFET
Base Product Number :
IXTH36
Gate to Source Voltage (Vgs) :
30V
Number of Terminations :
3
Qualification :
-
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pbfree Code :
yes
Turn-Off Delay Time :
75 ns
Number of Terminals :
3
MSL :
-
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSFM-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
540W
FET Type :
N-Channel
Number of Channels :
1 Channel
Number of Elements :
1
Continuous Drain Current (ID) :
36A
Transistor Application :
SWITCHING
Length :
16.26 mm
Product Type :
MOSFET
REACH SVHC :
No SVHC
Element Configuration :
Single
JESD-609 Code :
e1
Rds On (Max) @ Id, Vgs :
170m Ω @ 500mA, 10V
Height :
21.46 mm
Type :
PolarHV Power MOSFET
Surface Mount :
No
Transistor Element Material :
SILICON
Manufacturer :
IXYS
Series :
PolarHV™
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Additional Feature :
AVALANCHE RATED
Power Dissipation-Max :
540W Tc
Transistor Polarity :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Brand :
IXYS
Package :
Tube
JEDEC-95 Code :
TO-247AD
Continuous Drain Current Id :
36A
Subcategory :
MOSFETs
Current Rating :
36A
Threshold Voltage :
5V
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package / Case :
TO-247-3
Fall Time (Typ) :
21 ns
DS Breakdown Voltage-Min :
500 V
Rise Time :
27ns
Datasheets
IXTH36N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH36N50P from Xinshop,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1 Channel, Type:PolarHV Power MOSFET, Mounting Type:Through Hole, Package / Case:TO-247-3, IXTH36N50P pinout, IXTH36N50P datasheet PDF, IXTH36N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH36N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH36N50P


N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 85nC @ 10V 500V TO-247-3

IXTH36N50P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5500pF @ 25V.This device has a continuous drain current (ID) of [36A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 108A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH36N50P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IXTH36N50P Applications


There are a lot of IXYS
IXTH36N50P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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