IXTH36N50P
- Mfr.Part #
- IXTH36N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 36A TO247
- Stock
- 108
- In Stock :
- 108
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- FET Feature :
- --
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- DRAIN
- Nominal Vgs :
- 5 V
- Transistor Type :
- 1 N-Channel
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Terminal Position :
- Single
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Published :
- 2006
- Vgs (Max) :
- ±30V
- Maximum Operating Temperature :
- + 150 C
- Pulsed Drain Current-Max (IDM) :
- 108A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Channel Mode :
- Enhancement
- Reach Compliance Code :
- Compliant
- Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.17 Ω
- Resistance :
- 170mOhm
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 540W (Tc)
- Terminal Form :
- THROUGH-HOLE
- Polarity/Channel Type :
- N-Channel
- Channel Type :
- N Channel
- Drain to Source Voltage (Vdss) :
- 500V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 500V
- Supplier Device Package :
- TO-247 (IXTH)
- Package Shape :
- RECTANGULAR
- RoHS :
- Details
- Product Status :
- Active
- Tradename :
- PolarHV
- Mounting Style :
- Through Hole
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 500V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Packaging :
- Tube
- Width :
- 5.3 mm
- Product Category :
- MOSFET
- Base Product Number :
- IXTH36
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Terminations :
- 3
- Qualification :
- -
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 75 ns
- Number of Terminals :
- 3
- MSL :
- -
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSFM-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 540W
- FET Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 36A
- Transistor Application :
- SWITCHING
- Length :
- 16.26 mm
- Product Type :
- MOSFET
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 500mA, 10V
- Height :
- 21.46 mm
- Type :
- PolarHV Power MOSFET
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- Series :
- PolarHV™
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max :
- 540W Tc
- Transistor Polarity :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Brand :
- IXYS
- Package :
- Tube
- JEDEC-95 Code :
- TO-247AD
- Continuous Drain Current Id :
- 36A
- Subcategory :
- MOSFETs
- Current Rating :
- 36A
- Threshold Voltage :
- 5V
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package / Case :
- TO-247-3
- Fall Time (Typ) :
- 21 ns
- DS Breakdown Voltage-Min :
- 500 V
- Rise Time :
- 27ns
- Datasheets
- IXTH36N50P

N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 85nC @ 10V 500V TO-247-3
IXTH36N50P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5500pF @ 25V.This device has a continuous drain current (ID) of [36A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.A maximum pulsed drain current of 108A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500 V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTH36N50P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 108A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IXTH36N50P Applications
There are a lot of IXYS
IXTH36N50P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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