IXTH36P10
- Mfr.Part #
- IXTH36P10
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 36A TO247
- Stock
- 46,905
- In Stock :
- 46,905
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 16.26 mm
- Maximum Operating Temperature :
- + 150 C
- Continuous Drain Current (ID) :
- 36A
- Base Product Number :
- IXTH36
- Gate to Source Voltage (Vgs) :
- 20V
- DS Breakdown Voltage-Min :
- 100 V
- FET Type :
- P-Channel
- Factory Lead Time :
- 24 Weeks
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Published :
- 2002
- Series :
- --
- Minimum Operating Temperature :
- - 55 C
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Element Configuration :
- Single
- Fall Time (Typ) :
- 28 ns
- Polarity/Channel Type :
- P-Channel
- Product Status :
- Active
- Terminal Form :
- THROUGH-HOLE
- Brand :
- IXYS
- Power Dissipation (Max) :
- 180W (Tc)
- JESD-30 Code :
- R-PSFM-T3
- Drain Current-Max (Abs) (ID) :
- 36 A
- Power Dissipation :
- 180W
- Package Shape :
- RECTANGULAR
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 180W Tc
- JEDEC-95 Code :
- TO-247AD
- Transistor Application :
- SWITCHING
- RoHS :
- Details
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Polarity :
- P-Channel
- Supplier Device Package :
- TO-247 (IXTH)
- Mounting Style :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- -100V
- Product Type :
- MOSFET
- FET Feature :
- --
- Width :
- 5.3 mm
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-247-3
- Surface Mount :
- No
- Drain to Source Voltage (Vdss) :
- 100V
- Number of Terminals :
- 3
- Rise Time :
- 37ns
- Number of Pins :
- 3
- Product Category :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 144A
- Terminal Position :
- Single
- Reach Compliance Code :
- Compliant
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Type :
- 1 P-Channel
- Pbfree Code :
- yes
- Height :
- 21.46 mm
- Turn-Off Delay Time :
- 65 ns
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2800pF @ 25V
- Drain-source On Resistance-Max :
- 0.075Ohm
- Additional Feature :
- AVALANCHE RATED
- Package :
- Tube
- Power Dissipation-Max (Abs) :
- 180 W
- Operating Mode :
- ENHANCEMENT MODE
- Manufacturer :
- IXYS
- Channel Mode :
- Enhancement
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 18A, 10V
- Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Channels :
- 1 Channel
- Datasheets
- IXTH36P10

P-Channel Tube 75m Ω @ 18A, 10V ±20V 2800pF @ 25V 95nC @ 10V 100V TO-247-3
IXTH36P10 Overview
A device's maximum input capacitance is 2800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 36A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-100V, and this device has a drain-to-source breakdown voltage of -100V voltage.Its drain current is 36 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 65 ns.Its maximum pulsed drain current is 144A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 100 V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTH36P10 Features
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 144A.
a 100V drain to source voltage (Vdss)
IXTH36P10 Applications
There are a lot of IXYS
IXTH36P10 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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