KSP10TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Width :

3.86mm

Collector-Base Capacitance-Max :

0.7pF

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

60

Factory Lead Time :

7 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Radiation Hardening :

No

Base Part Number :

KSP10

Published :

2002

Power Dissipation :

350mW

Collector Base Voltage (VCBO) :

30V

Collector Emitter Breakdown Voltage :

25V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Type :

NPN

Terminal Position :

BOTTOM

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Element Configuration :

Single

Transition Frequency :

650MHz

Voltage - Rated DC :

25V

Operating Temperature :

150°C TJ

Max Collector Current :

4mA

Height :

4.58mm

Collector Emitter Saturation Voltage :

500mV

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Frequency :

650MHz

Weight :

240mg

Mounting Type :

Through Hole

Gain Bandwidth Product :

650MHz

Mount :

Through Hole

Number of Terminations :

3

JESD-609 Code :

e3

Length :

4.58mm

Emitter Base Voltage (VEBO) :

3V

Collector Emitter Voltage (VCEO) :

25V

Max Breakdown Voltage :

25V

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Box (TB)

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

350mW

Pbfree Code :

yes

ECCN Code :

EAR99

Current Rating :

100mA