KSP42TA
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- Mfr.Part #
- KSP42TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92-3
- Stock
- 32,140
- In Stock ：
- 32,140
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 300V
- Current Rating :
- 500mA
- Power Dissipation :
- 625mW
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Transistor Element Material :
- SILICON
- Base Part Number :
- KSP42
- Collector Base Voltage (VCBO) :
- 300V
- Height :
- 4.58mm
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 6 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Width :
- 3.86mm
- Voltage - Rated DC :
- 300V
- Collector Emitter Saturation Voltage :
- 500mV
- Weight :
- 240mg
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Box (TB)
- Max Breakdown Voltage :
- 300V
- Collector Emitter Voltage (VCEO) :
- 300V
- hFE Min :
- 40
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Frequency :
- 50MHz
- Gain Bandwidth Product :
- 50MHz
- ECCN Code :
- EAR99
- Length :
- 4.58mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Published :
- 2002
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 625mW
- Mount :
- Through Hole
- Max Collector Current :
- 500mA
- REACH SVHC :
- No SVHC
- Terminal Position :
- BOTTOM
- Datasheets
- KSP42TA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP42TA Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 500mA volts is possible.
KSP42TA Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
KSP42TA Applications
There are a lot of ON Semiconductor
KSP42TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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