KST10MTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Base Part Number :

KST10

Max Breakdown Voltage :

25V

Element Configuration :

Single

Mount :

Surface Mount

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Weight :

30mg

Width :

1.3mm

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

3V

Number of Pins :

3

Published :

2002

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Collector Emitter Breakdown Voltage :

25V

Height :

960μm

Power Dissipation :

350mW

Voltage - Rated DC :

25V

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Output Power :

350mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector-Base Capacitance-Max :

0.7pF

Transition Frequency :

650MHz

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

25V

Radiation Hardening :

No

Length :

2.9mm

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

30V

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

500mV

Factory Lead Time :

13 Weeks

Gain Bandwidth Product :

650MHz

Frequency :

650MHz

Transistor Type :

NPN

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Current Rating :

4mA

Max Power Dissipation :

350mW

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

hFE Min :

60

Max Collector Current :

50mA

Mounting Type :

Surface Mount