MBR12020CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Voltage - Forward (Vf) (Max) @ If :

650mV @ 120A

Mount :

Chassis Mount

Current - Average Rectified (Io) :

120A DC

Max Repetitive Reverse Voltage (Vrrm) :

20V

Forward Current :

60A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Common Anode

Packaging :

Bulk

Number of Terminations :

2

REACH SVHC :

No SVHC

Published :

2012

Number of Pins :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Diode Element Material :

SILICON

Peak Reverse Current :

1A

Max Surge Current :

800A

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Min Operating Temperature :

-40°C

Forward Voltage :

650mV

Max Reverse Voltage (DC) :

20V

Factory Lead Time :

6 Weeks

Operating Temperature - Junction :

-55°C~150°C

Package / Case :

Twin Tower

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Diode Configuration :

1 Pair Common Anode

RoHS Status :

RoHS Compliant

Diode Type :

Schottky

ECCN Code :

EAR99

Application :

Power

Max Reverse Leakage Current :

1μA

HTS Code :

8541.10.00.80

Pbfree Code :

yes

Current - Reverse Leakage @ Vr :

3mA @ 20V

Max Forward Surge Current (Ifsm) :

800A

Max Operating Temperature :

175°C

Average Rectified Current :

120A

Terminal Position :

UPPER

Terminal Form :

UNSPECIFIED

Number of Elements :

2

Number of Phases :

1

Mounting Type :

Chassis Mount