MBR600150CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Application :

Power

Diode Configuration :

1 Pair Common Cathode

HTS Code :

8541.10.00.80

RoHS Status :

RoHS Compliant

Average Rectified Current :

300A

Diode Element Material :

SILICON

Operating Temperature (Max) :

150°C

Terminal Position :

UPPER

Reverse Current-Max :

3000μA

Voltage - Forward (Vf) (Max) @ If :

880mV @ 300A

ECCN Code :

EAR99

Number of Phases :

1

Non-rep Pk Forward Current-Max :

4000A

Terminal Form :

UNSPECIFIED

Packaging :

Bulk

Pbfree Code :

yes

Number of Terminations :

2

JESD-30 Code :

R-PUFM-X2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lifecycle Status :

Production (Last Updated: 5 months ago)

Factory Lead Time :

6 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Chassis Mount

Max Reverse Voltage (DC) :

150V

Current - Reverse Leakage @ Vr :

3mA @ 150V

Package / Case :

Twin Tower

Element Configuration :

Common Cathode

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature - Junction :

-55°C~150°C

Mount :

Chassis Mount

Diode Type :

Schottky

Number of Elements :

2