MD2147H3

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Mfr.Part #
MD2147H3
Manufacturer
Altera (Intel)
Package / Case
18-CDIP
Datasheet
Download
Description
STANDARD SRAM, 4KX1, 55NS, MOS,
Stock
340
In Stock :
340

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Manufacturer :
Altera (Intel)
Product Category :
Memory
JESD-609 Code :
e0
Terminal Finish :
Tin/Lead (Sn/Pb)
Terminal Form :
THROUGH-HOLE
Series :
-
Memory Interface :
Parallel
Memory Width :
1
Surface Mount :
No
Number of Terminals :
18
Package :
Bulk
RoHS :
Non-Compliant
Package / Case :
18-CDIP
Operating Mode :
ASYNCHRONOUS
Terminal Pitch :
2.54 mm
Screening Level :
38535Q/M;38534H;883B
Memory Organization :
4K x 1
Terminal Position :
Dual
Memory IC Type :
STANDARD SRAM
Reach Compliance Code :
Unknown
Manufacturer :
Intel Corporation
Standby Voltage-Min :
4.5 V
Organization :
4KX1
Memory Format :
SRAM
Operating Temperature :
-55°C ~ 125°C (TC)
Qualification Status :
Not Qualified
Supply Current-Max :
0.18 mA
Output Characteristics :
3-STATE
Technology :
SRAM - Asynchronous
Package Shape :
RECTANGULAR
Temperature Grade :
Military
Memory Type :
Volatile
Parallel/Serial :
Parallel
Memory Size :
4Kbit
Product Status :
Active
Memory Density :
4096 bit
Write Cycle Time - Word, Page :
55ns
Voltage - Supply :
4.5V ~ 5.5V
Subcategory :
SRAMs
Access Time :
55 ns
Mounting Type :
Through Hole
Standby Current-Max :
0.03 A
Power Supplies :
5 V
Supplier Device Package :
18-CDIP
JESD-30 Code :
R-XDIP-T18
I/O Type :
Separate
Number of Words :
4096 words
Datasheets
MD2147H3
Introducing Memory Altera (Intel) MD2147H3 from Xinshop,where excellence meets affordability. This product stands out with its Package / Case:18-CDIP, Operating Temperature:-55°C ~ 125°C (TC), Mounting Type:Through Hole, MD2147H3 pinout, MD2147H3 datasheet PDF, MD2147H3 amp .Beyond Memory Altera (Intel) MD2147H3 ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Altera (Intel) MD2147H3


Memory Altera (Intel) MD2147H3 Overview

The Memory Altera (Intel) MD2147H3 STANDARD SRAM is a high-performance memory chip, meticulously crafted to meet the stringent demands of sophisticated electronic systems. With a 4KX1 configuration and rapid access time of 55 nanoseconds, this SRAM module from Intel's Altera division ensures exceptional speed and reliability for applications requiring quick data retrieval and storage. Its MOS technology foundation enhances stability and efficiency, making it an ideal choice for industry professionals seeking robust memory solutions for critical applications.

MD2147H3 Features

The MD2147H3 SRAM features a compact 4K x 1-bit structure, delivering high-speed performance with a minimal 55 ns access time. Built using MOS technology, it ensures low power consumption while maintaining high reliability and stability under a range of environmental conditions. This makes the MD2147H3 particularly suitable for demanding applications in both commercial and industrial settings.

MD2147H3 Applications

  • Embedded Systems: Utilized in complex embedded systems, the MD2147H3 provides efficient data storage and quick access necessary for real-time processing and control.
  • Industrial Automation: In automation equipment, this SRAM facilitates the rapid execution of control algorithms, enhancing the responsiveness and efficiency of automation systems.
  • Telecommunications: Essential for data buffering in communication equipment, the MD2147H3 supports high-speed operations crucial for telecommunications infrastructure.
  • Medical Devices: Reliable and quick data access makes this SRAM suitable for critical medical applications, where precise and immediate data retrieval is vital.
  • Aerospace: Its robust design ensures performance under the stringent conditions of aerospace applications, where reliability and data integrity are paramount.
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