MDS150
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- Mfr.Part #
- MDS150
- Manufacturer
- Microsemi
- Package / Case
- 55AW
- Datasheet
- Download
- Description
- RF TRANS NPN 60V 1.09GHZ 55AW
- Stock
- 24,509
- In Stock ：
- 24,509
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Max Power Dissipation :
- 350W
- Case Connection :
- Base
- Terminal Finish :
- TIN LEAD
- Configuration :
- Single
- Terminal Form :
- Flat
- Packaging :
- Bulk
- Pbfree Code :
- No
- Frequency - Transition :
- 1.03GHz~1.09GHz
- Published :
- 2012
- Number of Terminations :
- 3
- Mount :
- Chassis Mount, Screw
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 500mA 5V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Chassis Mount
- Highest Frequency Band :
- L B
- ECCN Code :
- EAR99
- Max Collector Current :
- 4A
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 55
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 55V
- JESD-30 Code :
- R-PDFM-F3
- Terminal Position :
- Dual
- Operating Temperature :
- 200°C TJ
- Collector Emitter Voltage (VCEO) :
- 55V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Package / Case :
- 55AW
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Power - Max :
- 350W
- Gain :
- 10dB
- RoHS Status :
- RoHS Compliant
- Datasheets
- MDS150
MDS150 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Microsemi Corporation stock available at
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