MJ15015
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- Mfr.Part #
- MJ15015
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 15A TO3
- Stock
- 138
- In Stock ：
- 138
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 6MHz
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 2
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 4A 2V
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100μA
- REACH SVHC :
- No SVHC
- Packaging :
- Tray
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Application :
- SWITCHING
- Terminal Form :
- PIN/PEG
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 12 Weeks
- Published :
- 2006
- Operating Temperature :
- -65°C~200°C TJ
- hFE Min :
- 10
- Length :
- 39.37mm
- Height :
- 8.51mm
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 7A, 15A
- Collector Emitter Breakdown Voltage :
- 120V
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 6MHz
- Collector Base Voltage (VCBO) :
- 200V
- Transition Frequency :
- 0.8MHz
- Element Configuration :
- Single
- Package / Case :
- TO-204AA, TO-3
- Current Rating :
- 15A
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 15A
- Collector Emitter Voltage (VCEO) :
- 120V
- Width :
- 26.67mm
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 1.1V
- JESD-609 Code :
- e3
- Terminal Position :
- BOTTOM
- Surface Mount :
- No
- Power Dissipation :
- 180W
- Pbfree Code :
- yes
- Weight :
- 4.535924g
- Voltage - Rated DC :
- 120V
- Transistor Element Material :
- SILICON
- Pin Count :
- 2
- Max Power Dissipation :
- 180W
- Datasheets
- MJ15015
NPN -65°C~200°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15015G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 4A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 5V @ 7A, 15A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 15A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.8MHz.During maximum operation, collector current can be as low as 15A volts.
MJ15015G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 0.8MHz
MJ15015G Applications
There are a lot of ON Semiconductor
MJ15015G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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