MJ15015
- Mfr.Part #
- MJ15015
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 15A TO3
- Stock
- 138
- In Stock :
- 138
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 120V
- Current - Collector Cutoff (Max) :
- 100μA
- Packaging :
- Tray
- Weight :
- 4.535924g
- Power Dissipation :
- 180W
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 2
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 2
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 7V
- Width :
- 26.67mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 200V
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -65°C~200°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 4A 2V
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 7A, 15A
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 6MHz
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 120V
- Collector Emitter Saturation Voltage :
- 1.1V
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Max Collector Current :
- 15A
- Package / Case :
- TO-204AA, TO-3
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 120V
- Current Rating :
- 15A
- Frequency :
- 6MHz
- Terminal Form :
- PIN/PEG
- Max Power Dissipation :
- 180W
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 12 Weeks
- hFE Min :
- 10
- Height :
- 8.51mm
- Published :
- 2006
- Length :
- 39.37mm
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Transition Frequency :
- 0.8MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MJ15015

NPN -65°C~200°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15015G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 4A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 5V @ 7A, 15A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 15A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.8MHz.During maximum operation, collector current can be as low as 15A volts.
MJ15015G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 0.8MHz
MJ15015G Applications
There are a lot of ON Semiconductor
MJ15015G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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