MJ15015
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- Mfr.Part #
- MJ15015
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 15A TO3
- Stock
- 138
- In Stock ：
- 138
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Terminal Form :
- PIN/PEG
- Contact Plating :
- Tin
- Package / Case :
- TO-204AA, TO-3
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 15A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 200V
- Pin Count :
- 2
- Weight :
- 4.535924g
- Published :
- 2006
- Case Connection :
- COLLECTOR
- Height :
- 8.51mm
- Packaging :
- Tray
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- hFE Min :
- 10
- Current - Collector Cutoff (Max) :
- 100μA
- Number of Terminations :
- 2
- Polarity/Channel Type :
- PNP
- Surface Mount :
- No
- Number of Pins :
- 2
- Voltage - Rated DC :
- 120V
- Max Power Dissipation :
- 180W
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 120V
- Collector Emitter Saturation Voltage :
- 1.1V
- Factory Lead Time :
- 12 Weeks
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -65°C~200°C TJ
- Frequency :
- 6MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 4A 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 180W
- Gain Bandwidth Product :
- 6MHz
- Collector Emitter Breakdown Voltage :
- 120V
- Transition Frequency :
- 0.8MHz
- Length :
- 39.37mm
- Max Collector Current :
- 15A
- Width :
- 26.67mm
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 7A, 15A
- Datasheets
- MJ15015
NPN -65°C~200°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15015G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 4A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 5V @ 7A, 15A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 15A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.8MHz.During maximum operation, collector current can be as low as 15A volts.
MJ15015G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 0.8MHz
MJ15015G Applications
There are a lot of ON Semiconductor
MJ15015G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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