MJE171G

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Mfr.Part #
MJE171G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 60V 3A TO126
Stock
38,955
In Stock :
38,955

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Mounting Type :
Through Hole
Transition Frequency :
50MHz
Power - Max :
1.5W
Base Part Number :
MJE171
Power Dissipation :
12.5W
Weight :
4.535924g
Element Configuration :
Single
Pbfree Code :
yes
Surface Mount :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 100mA 1V
hFE Min :
50
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
7.7978mm
Current - Collector Cutoff (Max) :
100nA ICBO
Vce Saturation (Max) @ Ib, Ic :
1.7V @ 600mA, 3A
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
260
Transistor Type :
PNP
Transistor Application :
SWITCHING
Height :
11.0998mm
Time@Peak Reflow Temperature-Max (s) :
40
Gain Bandwidth Product :
50MHz
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
80V
Factory Lead Time :
2 Weeks
Published :
2000
Packaging :
Bulk
REACH SVHC :
No SVHC
Max Power Dissipation :
1.5W
JESD-609 Code :
e3
Max Collector Current :
3A
Radiation Hardening :
No
Transistor Element Material :
SILICON
Package / Case :
TO-225AA, TO-126-3
Emitter Base Voltage (VEBO) :
7V
Polarity/Channel Type :
PNP
Number of Elements :
1
Collector Emitter Saturation Voltage :
1.7V
Collector Emitter Breakdown Voltage :
60V
Operating Temperature :
-65°C~150°C TJ
Width :
2.9972mm
Number of Terminations :
3
Voltage - Rated DC :
-60V
Lead Free :
Lead Free
Number of Pins :
3
Current Rating :
-3A
Frequency :
50MHz
Collector Emitter Voltage (VCEO) :
60V
Terminal Finish :
Tin (Sn)
Pin Count :
3
Datasheets
MJE171G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE171G from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:MJE171, Package / Case:TO-225AA, TO-126-3, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, Number of Pins:3, MJE171G pinout, MJE171G datasheet PDF, MJE171G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE171G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE171G


PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

MJE171G Overview


In this device, the DC current gain is 50 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.7V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

MJE171G Features


the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is -3A
a transition frequency of 50MHz


MJE171G Applications


There are a lot of ON Semiconductor
MJE171G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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