MMFT960T1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Drain to Source Breakdown Voltage :

60V

Packaging :

Cut Tape (CT)

Power Dissipation :

800mW

Published :

2006

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

65pF @ 25V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin (Sn)

Number of Pins :

4

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-65°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 10V

Drain Current-Max (Abs) (ID) :

0.3A

Current Rating :

300mA

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

300mA Tc

Lead Free :

Lead Free

Element Configuration :

Single

Radiation Hardening :

No

ECCN Code :

EAR99

Continuous Drain Current (ID) :

300mA

Case Connection :

DRAIN

Surface Mount :

yes

RoHS Status :

RoHS Compliant

Height :

1.65mm

Terminal Form :

Gull wing

Voltage - Rated DC :

60V

Rds On (Max) @ Id, Vgs :

1.7 Ω @ 1A, 10V

Mounting Type :

Surface Mount

Resistance :

1.7Ohm

Transistor Element Material :

SILICON

Length :

6.7mm

FET Type :

N-Channel

Width :

3.7mm

REACH SVHC :

No SVHC

Number of Elements :

1

Package / Case :

TO-261-4, TO-261AA

Power Dissipation-Max :

800mW Ta

Nominal Vgs :

1 V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

4