MMUN2132LT1G
- Mfr.Part #
- MMUN2132LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS PNP 50V SOT23-3
- Stock
- 9
- In Stock :
- 9
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- -50V
- Transistor Type :
- PNP - Pre-Biased
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.3mm
- Factory Lead Time :
- 5 Weeks
- Resistor - Base (R1) :
- 4.7 k Ω
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Min Operating Temperature :
- -55°C
- Continuous Collector Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Max Operating Temperature :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Published :
- 2008
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Base Part Number :
- MMUN21**L
- Current Rating :
- -100mA
- Power Dissipation :
- 246mW
- Surface Mount :
- yes
- Resistor - Emitter Base (R2) :
- 4.7 k Ω
- Collector Emitter Voltage (VCEO) :
- 50V
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 500nA
- Transistor Application :
- SWITCHING
- Height :
- 940μm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 5mA 10V
- Halogen Free :
- Halogen Free
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Max Breakdown Voltage :
- 50V
- Max Output Current :
- 100mA
- Pbfree Code :
- yes
- Pin Count :
- 3
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 250mV
- Polarity :
- PNP
- Operating Supply Voltage :
- 50V
- Terminal Position :
- Dual
- Length :
- 2.9mm
- hFE Min :
- 15
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Max Power Dissipation :
- 246mW
- Datasheets
- MMUN2132LT1G

MMUN2132LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
MMUN2132LT1G Description
The ON Semiconductor MMUN2132LT1G is designed to replace a single device and its external resistor bias network.
MMUN2132LT1G Features
NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
MMUN2132LT1G Applications
-
Automotive
-
Power Management
-
Industrial
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