MPSH17

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

JESD-609 Code :

e1

Gain :

24dB

Transistor Type :

NPN

Lead Free :

Lead Free

Mounting Type :

Through Hole

Pin Count :

3

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Packaging :

Bulk

Pbfree Code :

yes

Number of Pins :

3

Published :

2006

Noise Figure (dB Typ @ f) :

6dB @ 200MHz

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Max Power Dissipation :

350mW

Terminal Position :

BOTTOM

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 5mA 10V

Voltage - Rated DC :

15V

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

25

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

800MHz

Collector Base Voltage (VCBO) :

20V

Collector-Base Capacitance-Max :

0.9pF

Transistor Application :

AMPLIFIER

Number of Terminations :

3

Gain Bandwidth Product :

800MHz

Number of Elements :

1

Power Dissipation :

350mW

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

3V

Collector Emitter Breakdown Voltage :

15V

Current Rating :

5mA

Collector Emitter Saturation Voltage :

500mV

Base Part Number :

MPSH17

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

15V

Polarity/Channel Type :

NPN

Frequency :

800MHz