MRF422

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Mfr.Part #
MRF422
Manufacturer
MACOM Technology Solutions
Package / Case
211-11, Style 2
Datasheet
Download
Description
RF TRANS NPN 35V 211-11
Stock
331
In Stock :
331

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Manufacturer :
MACOM Technology Solutions
Product Category :
Transistors - Bipolar (BJT) - RF
hFE Min :
15
Published :
2009
Transistor Application :
AMPLIFIER
Mount :
Chassis Mount, Screw
Number of Elements :
1
Packaging :
Tray
Frequency :
30MHz
Polarity/Channel Type :
NPN
Mounting Type :
Chassis Mount
Min Operating Temperature :
-65°C
Number of Terminations :
4
Continuous Collector Current :
20A
Max Power Dissipation :
290W
Emitter Base Voltage (VEBO) :
3V
Collector Base Voltage (VCBO) :
85V
Number of Pins :
4
Collector Emitter Voltage (VCEO) :
40V
Collector Emitter Breakdown Voltage :
35V
Power Dissipation :
290W
Output Power :
150W
Lead Free :
Lead Free
Package / Case :
211-11, Style 2
Transistor Type :
NPN
Pin Count :
4
Terminal Form :
Flat
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 5A 5V
Gain :
13dB
Factory Lead Time :
20 Weeks
Max Collector Current :
20A
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Max Operating Temperature :
150°C
Terminal Position :
Radial
Pbfree Code :
yes
Datasheets
MRF422
Introducing Transistors - Bipolar (BJT) - RF MACOM Technology Solutions MRF422 from Xinshop,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Number of Terminations:4, Number of Pins:4, Package / Case:211-11, Style 2, Gain:13dB, MRF422 pinout, MRF422 datasheet PDF, MRF422 amp .Beyond Transistors - Bipolar (BJT) - RF MACOM Technology Solutions MRF422 ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

MACOM Technology Solutions MRF422


MRF422 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from M/A-Com Technology Solutions stock available at

The MA-COM MRF422 is a NPN Bipolar Junction Transistor (BJT) designed for use in RF applications. It has a maximum voltage rating of 35V and a maximum frequency rating of 211-11MHz. It is designed to provide high gain and low noise performance in a wide range of RF applications.

Features of the MA-COM MRF422 include a low noise figure of 1.5dB, a high gain of 15dB, and a high power output of up to 10W. It also has a high breakdown voltage of 35V and a low thermal resistance of 0.5°C/W.

Applications of the MA-COM MRF422 include RF amplifiers, RF power amplifiers, RF oscillators, RF mixers, and RF switches. It is also suitable for use in wireless communication systems, such as cellular phones, Wi-Fi, and Bluetooth.
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