MRF581

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Pbfree Code :

No

Terminal Form :

Flat

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 50mA 5V

Collector-Base Capacitance-Max :

3pF

Case Connection :

COLLECTOR

Polarity/Channel Type :

NPN

Mount :

Surface Mount

Package / Case :

Micro-X ceramic (84C)

Noise Figure (dB Typ @ f) :

3dB ~ 3.5dB @ 500MHz

Transition Frequency :

5000MHz

Radiation Hardening :

No

Pin Count :

4

Number of Terminations :

4

Number of Pins :

4

Frequency :

5GHz

Mounting Type :

Surface Mount

Transistor Application :

AMPLIFIER

Number of Elements :

1

Collector Base Voltage (VCBO) :

30V

Current - Collector (Ic) (Max) :

200mA

Max Power Dissipation :

1.25W

Operating Temperature :

150°C TJ

Max Collector Current :

200mA

Terminal Finish :

Tin/Lead (Sn/Pb)

Packaging :

Bulk

Base Part Number :

MRF581

JESD-609 Code :

e0

Gain :

13dB ~ 15.5dB

Collector Emitter Breakdown Voltage :

18V

Published :

2004

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

2.5V

Lifecycle Status :

Obsolete (Last Updated: 1 month ago)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

18V

RoHS Status :

RoHS Compliant

Power Dissipation :

1.25W

Configuration :

Single

Terminal Position :

Radial