MS1202

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Additional Feature :

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

Highest Frequency Band :

VERY HIGH FREQUENCY B

Case Connection :

Emitter

Pin Count :

4

Frequency - Transition :

118MHz~136MHz

Collector Base Voltage (VCBO) :

65V

Number of Elements :

1

Transistor Element Material :

SILICON

Packaging :

Bulk

ECCN Code :

EAR99

Terminal Form :

Flat

Power - Max :

15W

Operating Temperature :

200°C TJ

Number of Pins :

4

Transistor Type :

NPN

Package / Case :

M135

Collector Emitter Breakdown Voltage :

35V

Mounting Type :

Chassis Mount

Gain :

8.4dB

Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 100mA 5V

Max Collector Current :

1A

Collector Emitter Voltage (VCEO) :

35V

Radiation Hardening :

No

Max Power Dissipation :

15W

Published :

2003

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Radial

Mount :

Chassis Mount, Stud

Number of Terminations :

4

Collector-Base Capacitance-Max :

15pF

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

NPN