NAND01GW3A2AN6E
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- Mfr.Part #
- NAND01GW3A2AN6E
- Manufacturer
- STMicroelectronics
- Package / Case
- 48-TFSOP (0.724, 18.40mm Width)
- Datasheet
- Download
- Description
- IC FLASH 1GBIT PARALLEL 48TSOP
- Stock
- 7,586
- In Stock ：
- 7,586
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Memory
- RoHS Status :
- ROHS3 Compliant
- Memory Density :
- 1073741824 bit
- Width :
- 12mm
- Number of Sectors/Size :
- 8k
- Qualification Status :
- Not Qualified
- Page Size :
- 512words
- JESD-609 Code :
- e3/e6
- Terminal Position :
- Dual
- Pin Count :
- 48
- Number of Functions :
- 1
- Sector Size :
- 16k
- Memory Size :
- 1Gb 128M x 8
- Toggle Bit :
- No
- Ready/Busy :
- yes
- HTS Code :
- 8542.32.00.51
- Operating Temperature :
- -40°C~85°C TA
- Access Time (Max) :
- 12000 ns
- Voltage - Supply :
- 2.7V~3.6V
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Data Polling :
- No
- Height Seated (Max) :
- 1.2mm
- Organization :
- 128MX8
- Memory Interface :
- Parallel
- Supply Voltage-Max (Vsup) :
- 3.6V
- Package / Case :
- 48-TFSOP (0.724, 18.40mm Width)
- Length :
- 18.4mm
- Terminal Finish :
- TIN/TIN BISMUTH
- Programming Voltage :
- 3V
- ECCN Code :
- 3A991.B.1.A
- Memory Type :
- Non-Volatile
- Power Supplies :
- 3/3.3V
- Supply Current-Max :
- 0.02mA
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PDSO-G48
- Terminal Pitch :
- 0.5mm
- Standby Current-Max :
- 0.0001A
- Surface Mount :
- yes
- Base Part Number :
- NAND01
- Supply Voltage :
- 3V
- Supply Voltage-Min (Vsup) :
- 2.7V
- Number of Terminations :
- 48
- Command User Interface :
- yes
- Write Cycle Time - Word, Page :
- 30ns
- Peak Reflow Temperature (Cel) :
- 260
- Memory Width :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ASYNCHRONOUS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Memory Format :
- Flash
- Datasheets
- NAND01GW3A2AN6E
Memory STMicroelectronics NAND01GW3A2AN6E Overview
The NAND01GW3A2AN6E by STMicroelectronics is a high-capacity 1Gbit NAND Flash memory chip, encapsulated in a 48-pin TSOP package. This Memory component is engineered to meet the high-performance requirements of modern electronic devices that demand significant data storage and speed. The NAND01GW3A2AN6E is ideally suited for applications where durability and efficiency are key. Its robust design and advanced manufacturing ensure reliability and longevity, making it a prime choice for bulk purchases by businesses looking to integrate dependable memory solutions into their products.
NAND01GW3A2AN6E Features
The NAND01GW3A2AN6E from STMicroelectronics boasts a series of features that make it standout in the realm of Flash memory solutions. These include a parallel interface for high-speed data transfer, a large storage capacity of 1 Gbit, and a compact 48TSOP package which ensures a minimal footprint on system designs. Moreover, it supports a wide range of operating temperatures, making it versatile for various industrial applications.
NAND01GW3A2AN6E Applications
- Consumer Electronics: Utilized in devices such as smartphones, tablets, and digital cameras where reliable and rapid storage is necessary for user data and device functionality.
- Embedded Systems: Ideal for use in system-on-modules (SOM) and industrial PCs where long-term reliability and data integrity are crucial.
- Automotive Applications: Serves as storage for advanced driver-assistance systems (ADAS), infotainment systems, and other in-vehicle networks that require durable and enduring memory components.
- Internet of Things (IoT) Devices: Applies to a wide range of IoT applications including smart home devices and industrial IoT (IIoT) for data logging and firmware updates.
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