NDP7060

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

75A

Operating Temperature :

-65°C~175°C TJ

Height :

16.3mm

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2.8V

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Number of Terminations :

3

Number of Elements :

1

Mounting Type :

Through Hole

Lead Free :

Lead Free

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Fall Time (Typ) :

90 ns

Avalanche Energy Rating (Eas) :

550 mJ

Power Dissipation :

150W

Packaging :

Tube

Turn On Delay Time :

17 ns

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Nominal Vgs :

2.8 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Factory Lead Time :

9 Weeks

Weight :

1.8g

Rds On (Max) @ Id, Vgs :

13m Ω @ 40A, 10V

Current Rating :

75A

Length :

10.67mm

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

150W Tc

Resistance :

13mOhm

Voltage - Rated DC :

60V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Radiation Hardening :

No

Published :

1998

Number of Pins :

3

Drain to Source Breakdown Voltage :

60V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

225A

Turn-Off Delay Time :

54 ns

Width :

4.7mm

Vgs (Max) :

±20V

Rise Time :

128ns