NE25139-T1-U73

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - FETs, MOSFETs - RF

Operating Temperature (Max) :

125°C

Configuration :

Single

Surface Mount :

yes

DS Breakdown Voltage-Min :

13V

Transistor Application :

AMPLIFIER

Additional Feature :

LOW NOISE

Operating Mode :

DUAL GATE, DEPLETION MODE

Noise Figure :

1.1dB

Current Rating :

40mA

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G4

Qualification Status :

Not Qualified

Package / Case :

TO-253-4, TO-253AA

Transistor Element Material :

GALLIUM ARSENIDE

Case Connection :

SOURCE

Number of Elements :

1

Current - Test :

10mA

ECCN Code :

EAR99

Number of Terminations :

4

FET Technology :

METAL SEMICONDUCTOR

RoHS Status :

Non-RoHS Compliant

HTS Code :

8541.21.00.75

Voltage - Rated :

13V

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

NE251

Feedback Cap-Max (Crss) :

0.03 pF

Frequency :

900MHz

Transistor Type :

MESFET Dual Gate

Gain :

20dB

Voltage - Test :

5V

Drain Current-Max (Abs) (ID) :

0.035A

Packaging :

Tape and Reel (TR)