NE3210S01-T1B
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- Mfr.Part #
- NE3210S01-T1B
- Manufacturer
- CEL (California Eastern Laboratories)
- Package / Case
- 4-SMD
- Datasheet
- Download
- Description
- FET RF 4V 12GHZ S01
- Stock
- 46,912
- In Stock ：
- 46,912
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- Manufacturer :
- CEL (California Eastern Laboratories)
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Test :
- 10mA
- Current Rating :
- 15mA
- Lead Free :
- Lead Free
- FET Technology :
- HETERO-JUNCTION
- ECCN Code :
- EAR99
- Gain :
- 13.5dB
- Operating Mode :
- Depletion Mode
- Continuous Drain Current (ID) :
- 70mA
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- -3V
- Transistor Type :
- HFET
- Power Dissipation :
- 165mW
- Voltage - Test :
- 2V
- Drain to Source Voltage (Vdss) :
- 4V
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- SOURCE
- Configuration :
- Single
- Terminal Position :
- Radial
- Drain to Source Breakdown Voltage :
- 4V
- Min Operating Temperature :
- -65°C
- JESD-30 Code :
- O-PRDB-G4
- RoHS Status :
- RoHS Compliant
- Max Power Dissipation :
- 165mW
- Additional Feature :
- High Reliability
- Number of Elements :
- 1
- Pin Count :
- 4
- Number of Pins :
- 1
- Mount :
- Surface Mount
- Number of Terminations :
- 4
- Package / Case :
- 4-SMD
- Noise Figure :
- 0.35dB
- Frequency :
- 12GHz
- Max Operating Temperature :
- 125°C
- Datasheets
- NE3210S01-T1B
NE3210S01-T1B datasheet pdf and Transistors - FETs, MOSFETs - RF product details from CEL stock available at
Description: The NE3210S01-T1B is a high-performance RF JFET transistor from CEL Transistors. It is a Super Low Noise HJFET (High-Performance Junction Field-Effect Transistor) designed for use in RF applications. It features a low noise figure of 0.8 dB, high gain of 17 dB, and a wide frequency range of up to 3 GHz. It is also designed to be highly reliable and has a long lifetime.
Features:
- Low noise figure of 0.8 dB
- High gain of 17 dB
- Wide frequency range of up to 3 GHz
- High reliability and long lifetime
Applications:
- RF amplifiers
- Low noise amplifiers
- High frequency oscillators
- RF receivers
- RF transmitters
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NE3210S01 | CEL (California Eastern Laboratories) | 49,460 | FET RF 4V 12GHZ S01 |
| NE3225NP35 | CEL (California Eastern Laboratories) | 968 | NEO MAGNET .32O.D.X0.25"T N35 |
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