NE5520379A-T1A-A

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - RF

Frequency :

915MHz

Package / Case :

4-SMD, Flat Leads

Power Gain :

16dB

Drain to Source Breakdown Voltage :

15V

Max Power Dissipation :

20W

Max Operating Temperature :

125°C

Continuous Drain Current (ID) :

1.5A

Number of Elements :

1

Voltage - Test :

3.2V

RoHS Status :

RoHS Compliant

Min Breakdown Voltage :

15V

Power Dissipation :

20W

Transistor Type :

LDMOS

Number of Pins :

4

Min Operating Temperature :

-65°C

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Cut Tape (CT)

Gate to Source Voltage (Vgs) :

5V

Radiation Hardening :

No

Power - Output :

35.5dBm

Base Part Number :

NE55203