NTB4302

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Rise Time :

70ns

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Fall Time (Typ) :

30 ns

FET Type :

N-Channel

Voltage - Rated DC :

30V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

722 mJ

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e0

Turn-Off Delay Time :

32 ns

Power Dissipation :

80W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

74A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

74A Tc

Current Rating :

74A

Element Configuration :

Single

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

175A

Pin Count :

3

Power Dissipation-Max :

80W Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

2

Terminal Form :

Gull wing

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Peak Reflow Temperature (Cel) :

235

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 24V

Packaging :

Tube

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0093Ohm

Terminal Finish :

Tin/Lead (Sn/Pb)

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 37A, 10V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Published :

2005