NTB60N06G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

94.5 ns

Qualification Status :

Not Qualified

Voltage - Rated DC :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

60A Ta

Power Dissipation :

150W

Current Rating :

60A

Pulsed Drain Current-Max (IDM) :

180A

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

60V

Case Connection :

DRAIN

Power Dissipation-Max :

2.4W Ta 150W Tj

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2008

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

3220pF @ 25V

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

60A

Vgs (Max) :

±20V

Pin Count :

3

Avalanche Energy Rating (Eas) :

454 mJ

Rise Time :

180.7ns

Mount :

Surface Mount

Fall Time (Typ) :

142.5 ns

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Drain-source On Resistance-Max :

0.014Ohm

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Number of Terminations :

2