NTE195A

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Terminals :

3

Collector Current-Max (IC) :

1.5 A

Package Shape :

Round

Power Dissipation-Max (Abs) :

8 W

DC Current Gain-Min (hFE) :

30

HTS Code :

8541.29.00.75

Product Status :

Active

Gain :

10dB

Subcategory :

Other Transistors

Terminal Form :

Wire

Mounting Type :

Through Hole

Polarity/Channel Type :

NPN

Power Dissipation Ambient-Max :

8 W

Terminal Position :

BOTTOM

Transistor Type :

NPN

Collector Current (DC) :

1.5(A)

Transistor Application :

AMPLIFIER

Noise Figure (dB Typ @ f) :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 400mA, 2V

JEDEC-95 Code :

TO-39

Package / Case :

TO-205AD, TO-39-3 Metal Can

Surface Mount :

No

Current - Collector (Ic) (Max) :

1.5A

Number of Elements :

1

Supplier Device Package :

TO-39

ECCN Code :

EAR99

Pin Count :

3

Operating Temp Range :

-65C to 200C

Type :

NPN

Case Connection :

COLLECTOR

Configuration :

Single

Operating Temperature :

-

Voltage - Collector Emitter Breakdown (Max) :

70V

Qualification Status :

Not Qualified

Power - Max :

8W

Power Gain :

10(MIN)(dB)

Package :

Bag

Manufacturer :

NTE Electronics

Series :

-

Package Type :

TO-39

Power Dissipation :

8(W)

Transistor Element Material :

SILICON

Frequency - Transition :

-

Emitter-Base Voltage :

3(V)

Collector-Base Voltage :

70(V)

JESD-30 Code :

O-MBCY-W3

Reach Compliance Code :

Unknown