NTE912

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Arrays

Qualification Status :

Not Qualified

Pin Count :

14

Surface Mount :

No

Vce Saturation (Max) @ Ib, Ic :

230mV @ 1mA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 1mA, 3V

Power - Max :

750mW

Package / Case :

14-DIP (0.300", 7.62mm)

Package Shape :

RECTANGULAR

Operating Temperature :

-55°C ~ 125°C (TA)

Length :

152.4 mm

Number of Elements :

5

Manufacturer :

NTE Electronics

ECCN :

EAR99

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

Max Collector Current :

50 mA

Collector Current-Max (IC) :

0.05 A

Emitter Base Voltage (VEBO) :

5 V

Number of Channels :

5

Max Operating Temperature :

125 °C

Package :

Bag

Width :

76.2 mm

Transistor Application :

AMPLIFIER

REACH SVHC :

Unknown

Max Power Dissipation :

750 mW

Transistor Type :

5 NPN

HTS Code :

8541.21.00.75

Mount :

Through Hole

Subcategory :

Other Transistors

Height :

12.7 mm

Transition Frequency :

550 MHz

Voltage - Collector Emitter Breakdown (Max) :

24V

Supplier Device Package :

14-PDIP

Itar Registered :

No

Number of Pins :

14

Collector Emitter Voltage (VCEO) :

15 V

Polarity :

NPN

DC Current Gain-Min (hFE) :

40

Weight :

72.574779 g

Product Status :

Active

Current - Collector (Ic) (Max) :

50mA

RoHS :

Compliant

Frequency - Transition :

550MHz

Current - Collector Cutoff (Max) :

500nA

Output Voltage :

15 V

Min Operating Temperature :

-55 °C

Polarity/Channel Type :

NPN

Reach Compliance Code :

Unknown

ECCN Code :

EAR99

Number of Terminals :

14

Mounting Type :

Through Hole

Series :

-

JESD-30 Code :

R-PDIP-T14

Collector-Emitter Voltage-Max :

15 V

Collector Base Voltage (VCBO) :

20 V

Collector Emitter Breakdown Voltage :

24 V

Terminal Position :

Dual

Configuration :

COMPLEX