NTJS4151PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Radiation Hardening :

No

Number of Terminations :

6

Number of Elements :

1

Turn On Delay Time :

850 ps

Drain to Source Voltage (Vdss) :

20V

Terminal Position :

Dual

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1.2V @ 250µA

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Length :

2.2mm

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

-20V

Rise Time :

1.7ns

Threshold Voltage :

-400mV

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Published :

2005

Width :

1.35mm

Current Rating :

-3.3A

Resistance :

47mOhm

Continuous Drain Current (ID) :

4.2A

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1W Ta

Vgs (Max) :

±12V

Pin Count :

6

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

60m Ω @ 3.3A, 4.5V

Power Dissipation :

1W

Terminal Form :

Gull wing

Height :

1mm

Turn-Off Delay Time :

2.7 ns

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 10V

Number of Pins :

6

Fall Time (Typ) :

4.2 ns

Lead Free :

Lead Free

Voltage - Rated DC :

-20V

Package / Case :

6-TSSOP, SC-88, SOT-363

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

12V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current - Continuous Drain (Id) @ 25°C :

3.3A Ta

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)