NTMD6P02R2SG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.033Ohm

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 16V

Number of Terminations :

8

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-30 Code :

R-PDSO-G8

Terminal Form :

Gull wing

Number of Elements :

2

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Rds On (Max) @ Id, Vgs :

33m Ω @ 6.2A, 4.5V

FET Feature :

Logic Level Gate

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Pbfree Code :

No

DS Breakdown Voltage-Min :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

20V

Power - Max :

750mW

Current - Continuous Drain (Id) @ 25°C :

4.8A

Operating Temperature :

-55°C~150°C TJ

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Terminal Finish :

TIN LEAD

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

2 P-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

4.8A

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Feedback Cap-Max (Crss) :

450 pF

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

240

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL