NTMFD4901NFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2012

Drain Current-Max (Abs) (ID) :

13.5A

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 10A, 10V

Drain-source On Resistance-Max :

0.01Ohm

Case Connection :

DRAIN SOURCE

Pulsed Drain Current-Max (IDM) :

60A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

FET Feature :

Logic Level Gate

Package / Case :

8-PowerTDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Elements :

2

Drain to Source Voltage (Vdss) :

30V

Factory Lead Time :

9 Weeks

Continuous Drain Current (ID) :

17.9A

Gate Charge (Qg) (Max) @ Vgs :

9.7nC @ 4.5V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Pins :

8

Lead Free :

Lead Free

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

30V

Radiation Hardening :

No

Power - Max :

1.1W 1.2W

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1.2W

Terminal Form :

Flat

Pbfree Code :

yes

FET Type :

2 N-Channel (Dual), Schottky

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Number of Terminations :

8

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

10.3A 17.9A