NTMS10P02R2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-20V

Vgs (Max) :

±12V

Element Configuration :

Single

Pin Count :

8

Power Dissipation :

2.5W

Lead Free :

Lead Free

Threshold Voltage :

-880mV

Turn On Delay Time :

25 ns

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

110 ns

Height :

1.5mm

Number of Elements :

1

Voltage - Rated DC :

-20V

ECCN Code :

EAR99

Published :

2006

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

10A

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

4.5A

Gate to Source Voltage (Vgs) :

12V

Power Dissipation-Max :

1.6W Ta

Transistor Element Material :

SILICON

Factory Lead Time :

21 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Surface Mount :

yes

Rise Time :

40ns

Turn-Off Delay Time :

110 ns

Number of Terminations :

8

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4mm

Contact Plating :

Tin

Pbfree Code :

yes

Transistor Application :

SWITCHING

REACH SVHC :

Unknown

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta

JESD-609 Code :

e3

Current Rating :

-10A

Input Capacitance (Ciss) (Max) @ Vds :

3640pF @ 16V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mounting Type :

Surface Mount

Resistance :

14mOhm

Operating Mode :

ENHANCEMENT MODE

Length :

5mm

Number of Pins :

8

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 4.5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

14m Ω @ 10A, 4.5V