NX7002BKXBZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

285mW

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Mount :

Surface Mount

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

260mA

Additional Feature :

LOGIC LEVEL COMPATIBLE

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 10V

Reference Standard :

IEC-60134

Rds On (Max) @ Id, Vgs :

2.8 Ω @ 200mA, 10V

Package / Case :

6-XFDFN Exposed Pad

Published :

2015

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

285mW

Transistor Application :

SWITCHING

Factory Lead Time :

4 Weeks

Drain-source On Resistance-Max :

3.2Ohm

JESD-30 Code :

R-PDSO-N6

Packaging :

Cut Tape (CT)

Number of Terminations :

6

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Terminal Form :

NO LEAD

Number of Elements :

2

Pin Count :

6

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

0.33A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

23.6pF @ 10V

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

60V

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)