PBSS304PD,115
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- Mfr.Part #
- PBSS304PD,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- NEXPERIA PBSS304PD - SMALL SIGNA
- Stock
- 3,112
- In Stock ：
- 3,112
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 1A
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- PBSS304P
- Number of Elements :
- 1
- Frequency :
- 110MHz
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1.1W
- Element Configuration :
- Single
- Number of Terminations :
- 6
- Vce Saturation (Max) @ Ib, Ic :
- 540mV @ 500mA, 5A
- Collector Base Voltage (VCBO) :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Published :
- 2009
- Gain Bandwidth Product :
- 110MHz
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 80V
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 155 @ 500mA 2V
- Power Dissipation :
- 2.5W
- Mounting Type :
- Surface Mount
- Pin Count :
- 6
- Mount :
- Surface Mount
- Max Collector Current :
- 3A
- Number of Pins :
- 6
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Transition Frequency :
- 110MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Turn On Time-Max (ton) :
- 90ns
- Collector Emitter Breakdown Voltage :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Package / Case :
- SC-74, SOT-457
- Datasheets
- PBSS304PD,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS304PD,115 Overview
This device has a DC current gain of 155 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 540mV @ 500mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 110MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 3A volts is possible.
PBSS304PD,115 Features
the DC current gain for this device is 155 @ 500mA 2V
the vce saturation(Max) is 540mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz
PBSS304PD,115 Applications
There are a lot of Nexperia USA Inc.
PBSS304PD,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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