PD20010STR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Continuous Drain Current (ID) :

5A

Gain :

11dB

Terminal Form :

Flat

Base Part Number :

PD20010

Current Rating :

5A

Case Connection :

SOURCE

Element Configuration :

Single

Drain to Source Breakdown Voltage :

40V

Drain Current-Max (Abs) (ID) :

5A

Pin Count :

10

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Power Dissipation :

59W

JESD-30 Code :

R-PDFP-F2

Power - Output :

10W

ECCN Code :

EAR99

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

40V

Gate to Source Voltage (Vgs) :

15V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Frequency :

2GHz

Min Operating Temperature :

-65°C

Qualification Status :

Not Qualified

Current - Test :

150mA

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Transistor Type :

LDMOS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Max Output Power :

15W

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)

Max Power Dissipation :

59W

Transistor Application :

AMPLIFIER

Number of Terminations :

2

Number of Pins :

3

Voltage - Test :

13.6V

Max Operating Temperature :

150°C