PD55003-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Power Dissipation :

31.7W

Continuous Drain Current (ID) :

2.5A

Radiation Hardening :

No

Frequency :

500MHz

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Packaging :

Tube

Height :

3.5mm

JESD-609 Code :

e3

Max Power Dissipation :

31.7W

Peak Reflow Temperature (Cel) :

250

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

40V

Current Rating :

2.5A

Current - Test :

50mA

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G2

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Pin Count :

10

Base Part Number :

PD55003

Length :

7.5mm

Transistor Type :

LDMOS

Mount :

Surface Mount

Package / Case :

PowerSO-10 Exposed Bottom Pad

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

No SVHC

Max Output Power :

3W

Factory Lead Time :

25 Weeks

Number of Pins :

3

Additional Feature :

High Reliability

Power Gain :

17dB

Drain to Source Voltage (Vdss) :

40V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Transistor Application :

AMPLIFIER

Width :

9.4mm

Number of Terminations :

2

Case Connection :

SOURCE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Voltage - Test :

12.5V

Lead Free :

Lead Free

Terminal Form :

Gull wing

Voltage - Rated DC :

40V

Max Operating Temperature :

165°C

Terminal Finish :

Matte Tin (Sn) - annealed

Min Operating Temperature :

-65°C