PD57060S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Power Dissipation :

79W

Max Power Dissipation :

79W

Terminal Position :

Dual

Max Operating Temperature :

165°C

Min Operating Temperature :

-65°C

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Voltage (Vdss) :

65V

Max Output Power :

60W

Case Connection :

SOURCE

Number of Elements :

1

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-F2

Voltage - Test :

28V

Element Configuration :

Single

Voltage - Rated DC :

65V

Current - Test :

100mA

Additional Feature :

High Reliability

Lead Free :

Lead Free

Packaging :

Tube

Terminal Form :

Flat

Factory Lead Time :

25 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Current Rating :

7A

Peak Reflow Temperature (Cel) :

250

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

PowerSO-10 Exposed Bottom Pad

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Frequency :

945MHz

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn) - annealed

Transistor Type :

LDMOS

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

PD57060

Drain Current-Max (Abs) (ID) :

7A

Gain :

14.3dB

Number of Terminations :

2

Drain to Source Breakdown Voltage :

65V

Transistor Application :

AMPLIFIER

Pin Count :

10

Continuous Drain Current (ID) :

7A