PEMB18,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Mounting Type :

Surface Mount

Published :

2011

Max Power Dissipation :

300mW

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Number of Pins :

6

Transistor Type :

2 PNP - Pre-Biased (Dual)

Base Part Number :

MB18

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

50V

Max Breakdown Voltage :

50V

Number of Elements :

2

ECCN Code :

EAR99

JESD-609 Code :

e3

Lead Free :

Lead Free

Resistor - Base (R1) :

4.7k Ω

Max Operating Temperature :

150°C

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Min Operating Temperature :

-65°C

Mount :

Surface Mount

Factory Lead Time :

4 Weeks

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Flat

Element Configuration :

Dual

Resistor - Emitter Base (R2) :

10k Ω

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 2.1

Polarity :

PNP

Package / Case :

SOT-563, SOT-666

Current - Collector Cutoff (Max) :

1μA