PH2525L115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Radiation Hardening :

No

Power Dissipation :

62.5W

Transistor Element Material :

SILICON

Rise Time :

92ns

Length :

5mm

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

4470pF @ 12V

JESD-609 Code :

e3

Number of Terminations :

4

Height :

1.1mm

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Drain-source On Resistance-Max :

0.0039Ohm

JESD-30 Code :

R-PSSO-G4

Turn On Delay Time :

41 ns

Mount :

Surface Mount

Continuous Drain Current (ID) :

100A

Fall Time (Typ) :

37 ns

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchMOS™

Pulsed Drain Current-Max (IDM) :

300A

Drain to Source Breakdown Voltage :

25V

Lead Free :

Lead Free

Terminal Position :

Single

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

34.7nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

53 ns

Packaging :

Tape and Reel (TR)

Number of Pins :

5

Power Dissipation-Max :

62.5W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Width :

4.1mm

Number of Elements :

1

Avalanche Energy Rating (Eas) :

320 mJ

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 25A, 10V

Transistor Application :

SWITCHING

Published :

2006

Package / Case :

SC-100, SOT-669