PMCXB1000UEZ

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

30V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Published :

2016

JESD-30 Code :

R-PDSO-N6

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

6

Power - Max :

285mW Ta

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

6

Transistor Element Material :

SILICON

Case Connection :

DRAIN

FET Type :

N and P-Channel Complementary

Vgs(th) (Max) @ Id :

950mV @ 250μA

Package / Case :

6-XFDFN Exposed Pad

Terminal Form :

NO LEAD

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

30.3pF @ 15V 43.2pF @ 15V

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

670m Ω @ 590mA, 4.5V, 1.4 Ω @ 410mA, 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Dual

Reference Standard :

IEC-60134

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

590mA Ta 410mA Ta

Drain-source On Resistance-Max :

0.9Ohm

Gate Charge (Qg) (Max) @ Vgs :

1.05nC @ 4.5V, 1.2nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Standard

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

0.59A

Surface Mount :

yes